搜索结果: 1-4 共查到“半导体技术 3-D effect”相关记录4条 . 查询时间(0.141 秒)
Impact of the Stress on the Sub-Micron N-Metal Oxide Semiconductor Field Effect Transistor Characteristics
Hot-carrier-injection Stress time Drain current Transconductance MOSFET
2010/12/8
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects gener...
GaN Metal-insulator-semiconductor Field Effect Transistor Based on GaN/AlGaN/GaN Double Heterojunctions
GaN Metal-insulator-semiconductor Field EffectTransistorBased GaN/AlGaN/GaN Heterojunctions
2010/7/15
III-N is the most promising material for high-temperature, high-power electronic devices.
There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many
applications, metal...
Diode Physical Parameters for HEXFETs Characterization of Dose Effect
Dose effects HEXFET diode parameters
2010/12/9
Modeling techniques of P-N junctions have been applied for studying the physical parameters in metal-oxide semiconductor field-effect transistor structures. A parameter extraction method provides a pr...
Surface Recombination Via Interface Defects in Field Effect Transistors
Recombination current oxide semiconductor energy level
2010/12/10
Recombination current at the oxide-semiconductor interface of metal-oxide-semiconductor devices has been analyzed and compared with the experimental result. The activity of interface traps is dependen...