搜索结果: 1-12 共查到“电子技术 silicon”相关记录12条 . 查询时间(0.083 秒)
Analytical modeling of silicon carbide MESFET
Silicon carbide mathematics software the physical devices analog channel current
2014/12/31
This study concentrates on analytical modeling of silicon carbide MESFET device using MATH Lab software. In this study, an analytical simulation has been proposed to find the characteristics of SIC ME...
Life after silicon（图）
Life silicon silicon transistors
2009/12/15
The huge increases in the power and capacity of computers, cell phones and communications networks in the last 40 years have been the result of ever-shrinking silicon transistors. But silicon transist...
Beyond silicon: New transistor technology may power next microelectronic devices（图）
transistor technology microelectronic devices
2006/12/14
December 12, 2006，MIT engineers have demonstrated a technology that could introduce an important new phase of the microelectronics revolution that has already brought us iPods, laptops and much more.
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
GaN-on-Si is thought to be an approach for low cost RF power electronics [1]. However, the
performance of the GaN-HFET devices is influenced by the Si-substrate properties, the buffer
layer interfac...
Analysis on SOI(Silicon-on-Insulator)-based MMICs(Multimode Interference Couplers) with different thickness of upper Silicon layer
SOI MMICs thickness Silicon layer MMI
2010/7/16
It is compared with each other that MMIs made of SOI wafers with different thickness of upper Si layer have different properties. MMI coupler made of SOI wafers with thinner Si layer has better self-i...
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h l) Silicon Plates in a NaOH 35% Solution. Part II: 3D Etching Shapes, Analysis and Comparison with KOH 56%
the Chemical Etching (h k 0) and (h h l) Silicon Plates a NaOH 35% Solution KOH 56%
2010/12/8
This paper deals with the micromachining of various (h k 0) and (h h l) membrane–mesa structures in a NaOH 35% solution. Final etching shapes of micromachined structures show a marked anisotropy of ty...
New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
Heavy doping effects Transparent emitter Silicon solar cell Modeling-thin layer
2010/12/7
In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. This was accomplished according to the doping level of th...
New Coefficients of the Minority Carrier Lifetime and Bandgap Narrowing Models in the Transparent Emitter of Thin Film Silicon Solar Cells
Heavy doping effects Transparent emitter Silicon solar cell Modeling
2010/12/8
In this study we have determined new coefficients for the physical model describing the band-gap narrowing and the minority carriers lifetime. This was accomplished according to the doping level of th...
Silicon-based nanocrystals MOS memory devices with narrow channels have been fabricated. The investigation on the electrical characteristics including drain current-gate voltage curve, threshold volta...
An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide
Local valence band density of states amorphous silicon carbide hybrid orbitals
2010/12/9
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed.
Influence of Thermal Treatment on The Electronic Properties of ITO Thin Films Obtained by RF Cathodic Pulverization. Study of Solar Cells Based on Silicon/(RF Sputtered) ITO Junctions
ITO Thin Films RF Cathodic Pulverization Solar Cells Silicon/(RF Sputtered) ITO Junctions
2010/12/16
ITO (Indium Tin Oxide) thin films obtained by R.F cathodic sputtering have been studied. The influence of thermal treatment on the electronic properties of the films has been particularly investigated...