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Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD
Metamorphic buffer layer LP-MOCVD HEMT
2010/12/7
In this report, we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented ...
Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD
Delta-doped Resonant interband tunneling (RIT)
2010/12/7
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak c...