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Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation
diamond hydrogenation low resistivity plane wave method
2010/10/13
We have implanted boron (B) ions (dosage: 5×1014 cm−2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resis...
Multiple Dose He Ion Implantation into n-GaN for Electrical Isolation
He Ion n-GaN Electrical Isolation
2010/7/16
In this work, Wurtzite GaN films were implanted with 15KeV, 55KeV and 150KeV He ion respectively with various doses at room temperature. One of the groups of samples were annealed at 750 0C for 20 min...