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The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
A. Semiconductors B. Impurities in semiconductors C. Optical properties D. Hall effect measurement
2011/12/13
The nitrogen-doped, p-type ZnO film was grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (c-Al2O3) using radical NO as oxygen and nitrogen sources. The activation energy of ...