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Electrical Properties of Bi-Doped PbTe Layers Grown by Molecular Beam Epitaxy on BaF2 Substrates
Electrical Properties Bi-Doped PbTe Layers Molecular Beam Epitaxy BaF2 Substrates
2010/10/22
Resisistivity and Hall measurements were performed at temperatures from 10 to 320K on Bi-doped PbTe layers grown on (111) BaF2 by molecular beam epitaxy. Samples with electron concentration varying fr...
Preparation of Pb Doped 110 K Phase BiSrCaCuO Thick Films by Screen Printing
Pb Doped 110 K superconducting transition
2010/4/15
Thick Films of Bi2Sr2Ca2Cu3Ox were obtained on cleaved MgO (100) substrates from a component gel of stoichiometric composition with partial Pb substitution of Bi. Formation employeed screen printing m...