搜索结果: 1-3 共查到“计算物理学 Silicon”相关记录3条 . 查询时间(0.051 秒)
Silicon dry oxidation kinetics at low temperature in the nanometric range: modeling and experiment
Silicon dry oxidation kinetics low temperature modeling experiment
2011/9/14
Kinetics of silicon dry oxidation are investigated theoretically and experimentally at low temperature in the nanometer range where the limits of the Deal and Grove model becomes critical.Based on a f...
Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
Nucleation and growth Theory and models of film growth
2011/9/1
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to s...
A Theoretical Study on Silicon and III-V Compound Nanotubes
silicon nanotube first principles calculations
2010/4/12
In this paper we present a theoretical study on single-wall silicon and III-V compound nanotubes. First principles plane wave calculations within density functional theory are used to predict energe...