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Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors
A. Chalcopyrite A. Semiconductors E. Density Functional Theory E. TB-LMTO
2010/11/18
We have carried out ab-initio calculation and study of structural and elec-tronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors using Density Functional Theory (DFT) based self cons...
期刊信息
篇名
Intermediate-coupling polaron properties in wurtzite nitride semiconductors
语种
英文
撰写或编译
撰写
作者
闫祖威1,2,班士良2,梁希侠2
第一作者单位
1 内蒙古农业大学理学院；2 内蒙古大学理工学院
刊物名称
Phys. Lett.A326
页面
9
出版日期
2004年
4月
日
文章标识(IS...
Optical Properties and Determination of Thermal Transformation Parameters for Se0.65Te0.35 High Reflectance Thin Films
Optical Properties and Parameters High Reflectance Chalcogenide Semiconductors Thermal Transformation Parameters
2010/4/9
Chalcogenide glasses Se-Te have been prepared from the high purity constituent elements. Thin films of these materials have been deposited by vacuum evaporation. The thickness effects on the optical p...
Optical and Electrical Properties of Te Doped AlGaAsSb/AlAsSb Bragg Mirrors on InP
Semiconductor Bragg mirror AlGaAs/AlAsSb
2010/10/13
We present a comparative study carried out on the optical and electrical characteristics of undoped and Te doped AlGaAsSb/AlAsSb Bragg mirrors with 6.5 pairs of layers and bulk undoped and Te doped Al...
Transport Properties of a Ga1-xMnxAs/Ga1-yAlyAs Double-Barrier
Double barrier spin polarizer Diluted magnetic semiconductors Spintronic devices
2010/8/26
We study the transport properties of a spin filter consisting of a double-barrier resonant tunneling device in which the well is made of a semimagnetic material. Even if the device could be made of se...
Analysis of the Chemical Bath and its Effect on the Physical Properties of CdS/ITO thin Films
Chemical bath analysis Cadmium sulphide Semiconductor film Predominance diagrams
2010/9/29
Cadmium sulphide (CdS) thin films deposited on indium tin oxide (ITO) substrates were prepared by the chemical bath deposition technique at different values of pH and pNH3. This was made in order to a...
Thin-film ZnO/CdS/CuIn1 - xGaxSe2 Solar Cells: Anomalous Physical Properties of the CuIn1 - xGaxSe2 Absorber
Solar cells Photovoltaic Absorbers CuInSe2 Surface Interface Defects
2010/9/29
Thin-film ZnO/CdS/CuIn1¡xGaxSe2 solar cells are manufactured with »20% solar-cell conversion efficiency. The CuIn1¡xGaxSe2 (CIGS) absorber exhibits rather different physical properti...
Peculiarities of the Electric and Thermoelectric Properties of GaTe
GaTe Electrical conductivity Thermoelectric power
2010/4/9
Measurements of electrical conductivity, Hall coefficient and thermoelectric power were carried out over the temperature range 136--563 K for GaTe compound grown in single crystal form by modified Bri...
Numerical Simulation of the Optical Properties of SiC/SiO2 Quantum Dots
Numerical Simulation the Optical Properties SiC/SiO2 Quantum Dots
2010/10/21
We perform a theoretical investigation of the absorption and emission properties of quantum confined SiC/SiO2 spherical quantum dots, focusing on the the size-dependent emission and absorption spectra...
Epitaxial Hybrid Ferromagnet-Semiconductor Structures: Growth, Structural and Magnetic Properties
Epitaxial Hybrid Ferromagnet Semiconductor Structures Magnetic Properties
2010/10/21
Ferromagnet-semiconductor heterostructures are promising materials for the integration of magnetic or spin related functions into semiconductor materials and devices. Fe-on-GaAs and MnAs-on-GaAs are c...
Growth Mechanism and Some Properties of Cd1-xMnx Se Semimagnetic Semiconductor Thin Films
Dilute semiconductor reflux
2010/4/12
(Cd, Mn) Se dilute semiconductor or semimagnetic semiconductors have recently became the focus of intense research due to their interesting combination of magnetic and semiconducting properties, and a...
Effects of Substrate Temperature on Properties of a-SiNx:H Films
A. Hydrogenated amorphous silicon nitride B. Substrate temperature C. Dark conductivity D. Photoconductivity E. Optical gap
2010/4/13
Hydrogenated amorphous silicon nitride films were prepared in an rf glow-discharge system by the decomposition of silane + nitrogen gas mixture at various substrate temperatures. The effects of substr...
Physical Properties of Melt-Cast Annealed Bi1.6Pb0.4Sr2Ca3Cu4 O12 Compound
H-Tc Superconductivity BSCCO Critical Current
2010/4/14
A Bi1.6Pb0.4Sr2Ca3Cu4O12 compound was produced by melt-casting method. The microstructure of the sample was studied by Scanning Electron Microscopy. Phase analysis was carried out by X-ray diffraction...
Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si
Metal-oxide-semiconductor quasi-static
2010/4/15
Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted Si have been investigated by using C-V and G-V measurements. The control sample on pure Si substrate yielded normal C-V and G-V ch...