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Beyond the Random Phase Approximation for the Electron Correlation Energy: The Importance of Single Excitations
the Electron Correlation Energy Single Excitations
2010/11/17
The random phase approximation (RPA) for the electron correlation energy, combined with the exact-exchange energy, represents the state-of-the-art exchange-correlation functional within density-funct...
On a possibility of effective electron attraction without "a glue"
possibility of effective electron attraction
2010/11/25
Despite being under attack for almost twenty-five years there is no yet a commonly accepted solution for the problem of high temperature superconductivity1. Among different approaches there are theore...
Rare-gas clusters in intense VUV, XUV and soft x-ray pulses: Signatures of the transition from nanoplasma-driven cluster expansion to Coulomb explosion in ion and electron spectra
VUV XUV soft x-ray pulses
2010/11/16
We investigate the wavelength dependent ionization, heating, and expansion dynamics of medium-sized rare-gas clusters (Ar$_{923}$) under intense femtosecond short-wavelength free electron laser pulse...
Laser field absorption in self-generated electron-positron pair plasma
Laser field self-generated electron-positron pair plasma
2010/11/17
Recently much attention has being attracted to the problem of limitations on the attainable intensity of high power lasers [A.M. Fedotov {\it et al.} Phys. Rev. Lett. \textbf{105}, 080402 (2010)]. Th...
Electron star birth: A continuous phase transition at nonzero density
Electron star continuous phase transition nonzero density
2010/12/22
We show that charged black holes in Anti-de Sitter spacetime can undergo a third
order phase transition at a critical temperature in the presence of charged fermions. In
the low temperature phase, a...
We propose to couple a trapped single electron to superconducting structures located at a
variable distance from the electron. The electron is captured in a cryogenic Penning trap using electric eld...
Effect of Carrier Concentration Dependant Mobility on the Performance of High Electron Mobility Transistors
High Electron Mobility Transistor diffusion part drain current
2010/4/15
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes in...
We review our recent work towards quantum communication in a solid-state environment with qubits carried by electron spins. We propose three schemes to produce spin-entangled electrons, where the requ...
Electron Transport in GaAs Quantum Wells: Effect of Interface Roughness Scatterin
interface roughness electron transport
2010/4/16
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...