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This thesis discusses the full scope of a project exploring the physics of hierarchical clusters of interacting nanomagnets. These clusters may be relevant for novel applications such as multilevel da...
The random phase approximation (RPA) for the electron correlation energy, combined with the exact-exchange energy, represents the state-of-the-art exchange-correlation functional within density-funct...
Despite being under attack for almost twenty-five years there is no yet a commonly accepted solution for the problem of high temperature superconductivity1. Among different approaches there are theore...
We investigate the wavelength dependent ionization, heating, and expansion dynamics of medium-sized rare-gas clusters (Ar$_{923}$) under intense femtosecond short-wavelength free electron laser pulse...
Recently much attention has being attracted to the problem of limitations on the attainable intensity of high power lasers [A.M. Fedotov {\it et al.} Phys. Rev. Lett. \textbf{105}, 080402 (2010)]. Th...
We show that charged black holes in Anti-de Sitter spacetime can undergo a third order phase transition at a critical temperature in the presence of charged fermions. In the low temperature phase, a...
We propose to couple a trapped single electron to superconducting structures located at a variable distance from the electron. The electron is captured in a cryogenic Penning trap using electric eld...
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes in...
The ground-state properties of a two-dimensional quantum-dot are studied. We have used the shifted 1/N expansion method to solve the relative part Hamiltonian of two electrons confined in a quantum in...
We review our recent work towards quantum communication in a solid-state environment with qubits carried by electron spins. We propose three schemes to produce spin-entangled electrons, where the requ...
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...

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