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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
High growth rate 4H-SiC epitaxial growth hot-wall CVD reactor
2010/11/18
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical
vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We
discuss the use of dichlorosil...
期刊信息
篇名
The Size Dependence of Growth Rate of Monodiperse Silica Particles from Tetraakoxysilane
语种
英文
撰写或编译
撰写
作者
Chen Shenhli(陈胜利),Dong Peng(董鹏)
第一作者单位
石油大学（北京）
刊物名称
J.Colloid Interface Sic.
页面
1997...
The Effect of Preparation conditions on the Growth Rate of Films, the Yield of Precipitated Powder and the DC Conductivity of Polypyrrole
DC Conductivity Conducting Polymers Polypyrrole Quartz Crystal Microbalance Technique
2010/4/12
Polypyrrole (PPy) was prepared by a chemical method by using oxidizing agents ferric chloride and potassium persulphate, both as films and pellets. The effect of various variables-such as aging of the...