搜索结果: 1-15 共查到“物理学 A. Semiconductors”相关记录36条 . 查询时间(0.061 秒)
国际半导体业界权威刊物《Semiconductor Today》和《Compound Semiconductors》相继报道陈长清、戴江南团队研究新进展(图)
半导体;深紫外发光;芯片;器件领域
2021/10/18
华中科技大学武汉光电国家研究中心陈长清、戴江南研究团队近11年以来一直从事半导体深紫外发光芯片和器件领域(重点围绕Deep Ultraviolet Light Emitting Diodes和Deep Ultraviolet Laser Diodes)的研究工作。近日,国际半导体业界权威刊物《Semiconductor Today》和《Compound Semiconductors》相继报道团队研...
2017 Workshop on Computational Semiconductors Physics
2017 Workshop Computational Semiconductors Physics
2017/7/17
On behalf of the organizing committee, it is our privilege to invite you to the Workshopon Computational Semiconductors Physics, Aug 20-24, 2017, in Hohhot,Inner Mongolia, China! We are honored to hos...
第三十三届国际半导体物理大会(33rd International Conference on the Physics of Semiconductors)
第三十三届 国际半导体物理 大会
2016/1/9
ICPS 2016 continues a series of biennial conferences that began in the 1950's. The 33rd ICPS will be held in Beijing, China on July 31- August 5, 2016. ICPS is the premier meeting for reporting all as...
Ferromagnetism in Dilute Magnetic Semiconductors
Ferromagnetism Dilute Magnetic Semiconductors
2010/11/23
Ferromagnetism in Dilute Magnetic Semiconductors.
Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
Optical Dielectric Functions III-V Semiconductors Wurtzite Phase
2010/11/22
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free st...
Existence of vertical spin stiffness in Landau-Lifshitz-Gilbert equation in ferromagnetic semiconductors
Existence of vertical spin stiffness ferromagnetic semiconductors
2010/11/18
We calculate the magnetization torque due to the spin polarization of the itinerant electrons by deriving the kinetic spin Bloch equations based on the s-d model. We find that the first-order gradient...
Trionic Optical Potential for Electrons in Semiconductors
Trionic Optical Potential Semiconductors
2010/11/19
Laser-induced optical potentials for atoms have led to remarkable advances in precision measurement, quantum information, and towards addressing fundamental questions in condensed matter physics.
Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors
A. Chalcopyrite A. Semiconductors E. Density Functional Theory E. TB-LMTO
2010/11/18
We have carried out ab-initio calculation and study of structural and elec-tronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors using Density Functional Theory (DFT) based self cons...
Large tunable photonic band gaps in nanostructured doped semiconductors
Large tunable photonic nanostructured doped semiconductors
2010/11/16
A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature...
Characterization of Cd1−xFexS diluted magnetic semiconductors grown at near phase conversion temperature
A. Cd1− xFexS D. Phase conversion D. Van Vleck-type paramagnetism
2011/12/8
Fe-based cadmium sulfide alloy thin films have been grown on c-plane sapphire substrates by a low-pressure metalorganic chemical vapor deposition technique at different growth temperatures. From X-ray...
Optical and Structural Properties of the GaSxSe1-x, GaSe, TlGaSe2 and TlInS2 Semiconductors
Chalcogenides layered semiconductors optical properties vibrational modes multiphonon absorption crystalline and band structure correlation analysis
2010/4/9
In the present work, crystal structure and optical properties of the layered chalcogenides GaSxSe1-x, GaSe, TlGaSe2 and TlInS2 were investigated in the visible (VIS) and infrared (IR) range of spectra...
First-Principles Studies for the Electronic Structures of Diluted
Magnetic Semiconductors (Ga, Fe)As
diluted magnetic semiconductor electronic band calculation
ferromagnetism
2007/8/15
2003Vol.40No.4pp.499-502DOI:
First-Principles Studies for the Electronic Structures of Diluted
Magnetic Semiconductors (Ga, Fe)As
WEI Shu-Yi, WANG Tian-Xing, YANG Zong-Xian, and ...
Simulated Annealing for Ground State Energy of Ionized Donor Bound
Excitons in Semiconductors
ground state energy bound exciton simulated annealing helium atom
2007/8/15
2004Vol.42No.5pp.779-784DOI:
Simulated Annealing for Ground State Energy of Ionized Donor Bound
Excitons in Semiconductors
YAN Hai-Qing, TANG Chen, LIU Ming, ZHANG Hao, and ZHANG...
Quasineutral limit of the drift diffusion models for semiconductors with the general initial data
2007/7/28
专著信息
书名
Quasineutral limit of the drift diffusion models for semiconductors with the general initial data
语种
英文
撰写或编译
作者
C. Schmeiser,王术
第一作者单位
出版社
Math. Models and Methods Appl. Sci.,13(4)(2003), 463...