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Annealing time effect on the properties of CuInSe2 grown by electrodeposition using two electrodes system
thin films CuInSe2 electrodeposition annealing time
2010/7/8
In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe2 films. The CuInSe2 thin films have been grown at room temperature by electrochemical deposit...
采用电化学沉积法制备了太阳电池用CuInSe2薄膜. 利用循环伏安法(CV)、X射线能谱(EDS)和X射线衍射技术(XRD)研究了电沉积过程中CuInSe2的形成机理, 并研究了制备工艺对膜层成分、形貌和物相结构的影响. 研究结果表明, 铟进入固相是通过In3+受Cu3Se2诱导作用欠电势还原或者In3+与H2Se反应这两种途径实现; 先沉积的Cu3Se2与新生成的铟或铟硒化合物反应最后生成CuI...