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Modeling of the I–V Characteristics for LDD-nMOSFETs in Relation with Defects Induced by Hot-Carrier Injection
I–V characteristics MOS LDD Modeling Defects
2010/12/7
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers,...