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Photoreflectance study of Al0.45Ga0.55As/GaAs superlattice: optical transitions at the miniband Γ and Π points
superlattice photoreflectance modulation spectroscopy
2011/5/11
In this paper, we present the results of photoreflectance (PR) investigation of an Al0.45Ga0.55As/GaAs superlattice (SL). The modulation spectra have revealed a number of features at both room and low...
Photoreflectance study of partially relaxed epitaxial InGaAs on GaAs
III-V semiconductors PR spectroscopy X-ray diffraction
2011/5/10
Room temperature photoreflectance (PR) spectroscopy and high resolution X-ray diffraction (HRXRD) have been used to investigate InxGa1–xAs layers grown compressively by MOVPE on GaAs substrates, with ...
Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique
GaN photoreflectance photoluminescence electric field
2011/4/27
The room temperature photoreflectance (PR) spectroscopy was used to investigate thick GaN epitaxial layers. The GaN layers were grown by hydride vapour phase epitaxy (HVPE) technique and compared to t...