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西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors
西安电子科技大学电子工程学院 模拟电子线路 英文课件 Chapter3 Bipolar Junction Transistors
2020/6/10
西安电子科技大学电子工程学院模拟电子线路英文课件Chapter3 Bipolar Junction Transistors。
2017年第17届国际交叉技术研讨会（2017 17th International Workshop on Junction Technology）
2017年 第17届 国际交叉技术 研讨会
2017/5/23
The 17th International Workshop on Junction Technology (IWJT2017) will be held on June 1 - 2, 2017 in Kyoto, Japan. Since started in 2000, IWJT has been held annually in Japan or China. IWJT is an ope...
Extraction of Road Junction Islands from High Resolution Aerial Imagery Using Level Sets
Road junction Island Level set High resolution Aerial image
2015/12/4
Road junctions are important components of a road network. However, they are usually not explicitly modelled in existing road extraction approaches. In this paper, we consider road junctions as area o...
Dispersion Mechanisms of a Tidal River Junction in the Sacramento–San Joaquin Delta, California
Junction dispersion flow phasing tidal trapping super-tidal time scales Delta Cross Channel
2015/6/30
In branching channel networks, such as in the Sacramento–San Joaquin River Delta, junction flow dynamics contribute to dispersion of ecologically important entities such as fish, pollutants, nutrients...
JUNCTION EXTRACTION BY ARTIFICIAL NEURAL NETWORK SYSTEM – JEANS
Artificial Neural Networks Automatic Object Extraction
2015/3/24
The paper presents a road junction operator, which was developed for medium resolution black-and-white
orthoimages. The operator uses a feed-forward neural network applied for a running window to de...
Physics based analytical modeling of Gallium Arsenide MESFET for evaluation of junction capacitance with new modeling conception
Modeling gaas mesfets leakage current the drain-source voltage voltage current voltage characteristic
2014/12/31
In this project, an analytical modeling of Gallium Arsenide MESFET has been reported. The model has been developed to obtain the drain current versus drain-source voltage for different gate-source vol...
JUNCTION EXTRACTION FROM HIGH RESOLUTION IMAGES BY COMPOSITE LEARNING
Road Extraction Remote Sensing Pattern Recognition
2014/12/31
This paper aims to present the junction recognition level of RECoiL, a system for Road Extraction from High Resolution Images by Composite Learning. By modelling junctions as specific junction types a...
Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction
Coexistance giant tunneling electroresistance magnetoresistance all-oxide magnetic tunnel junction
2012/2/24
We demonstrate with first-principles electron transport calculations that large tunneling magnetoresistance (TMR) and tunneling electroresistance (TER) effects can coexist in an all-oxide device. The ...
An influence of the curvature on the kink dynamics in the spherical Josephson junction
Josephson junction Sine-Gordon model Kink solution
2010/1/11
The main finding of this article is an effective potential that describes the influence of the curvature on the kink motion in the spherical Josephson junction.
Research limitations/implications: The...
Precise tuning of the kink width in the long Josephson junction
Long Josephson junction Sine-Gordon model Kink solution
2009/12/2
Purpose: The purpose of this report is to present how the external magnetic field can be employed in order to precise control the kink width in the long Josephson junction.
Design/methodology/approac...
100°C, 10 Gbps Operation of Buried Tunnel Junction GaInNAs VCSELs
Buried Tunnel Junction GaInNAs VCSELs
2015/8/3
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25°C to 100°C with operation current of 5.6 mA and extinction ratio of 4.2 dB.
100°C, 10 Gbps Operation of Buried Tunnel Junction GaInNAs VCSELs
Buried Tunnel Junction GaInNAs VCSELs
2015/8/3
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25°C to 100°C with operation current of 5.6 mA and extinction ratio of 4.2 dB.
Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector
silicon p-n junction photodetector
2011/5/3
On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) ...
Junction Parameter Extraction for Electronic Device Characterization
Junction Parameter Extraction Electronic Device Characterization
2010/12/7
A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determin...
A New Junction Parameters Determination Using the Double Exponential Model
Characteristic Junction Parameters Extraction Modeling
2010/12/7
A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage charac...