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We study in this paper the intersubband optical absorption of Si doped GaAs layer for different applied electric fields and donors concentration. The electronic structure has been calculated by solvin...
This work investigated the enhancement of the data transfer rate and/or recrystallization speed of Ge–In–Sb–Te recording material by nitrogen doping. The effects of nitrogen content on the dynamic pro...
In this work, we studied the enhancement of overwriting characteristics of phase-change optical disks by doping in the dielectric layers. The doping elements included chromium (Cr), molybdenum (Mo), n...
This work investigates the thermal, optical and recrystallization properties as well as the microstructure of nitrogen-doped Ge–In–Sb–Te (GIST) phase-change material when irradiated by blue-light lase...
510 nm, 37% of nitrogen monoxide could be continuously removed by the carbon and nitrogen co-doped titania prepared by planetary ball milling of P-25 titania-10% hexamethylenetetramine mixture followe...
The research on utilizing lithium-ion batteries with LiNi0.8Co0.2O2-based cathode for hybrid electric vehicles is intensively underway in several national laboratories of US Department of Energy. The ...
A new technique is proposed for the fabrication of fine patterns of molecular doping in organic–inorganic hybrid materials by the combination of capillary electrophoresis doping (CED) and photolithogr...
High current effects on double heterojunction bipolar transistor (DHBT) performance were investigated. Three DHBTs with different collector doping densities were grown and processed. DC and RF measure...
The amplification properties of guided modes in Yb-doped rod-type photonic crystal fibers with sectioned core doping have been investigated, evaluating the doped-area radius which provides the effecti...
Carrier mobility has become the most important characteristic of high speed low dimensional devices. Due to development of very fast switching semiconductor devices, speed of computer and communica...
We investigated the doping of thin polyaniline (PANI) films, prepared by the chemical oxidation of aniline, with different acids. The initial step in the investigation is the preparation of PANI film...
期刊信息 篇名 Study of the pulsed laser vapor doping of the Si (100) with KrF excimer laser and BCl3 gas 语种 中文 撰写或编译 撰写 作者 Wei Lin Shi,Xiying Ma 第一作者单位 绍兴文理学院 刊物名称 Applied Surface Science 页面 Vol. 230, 44–49...
In0.22Ga0.78As/GaAs single quantum wells with different distance from a delta doped layer have been investigated by using contactless electroreflectance (CER) spectroscopy. The oscillator strength of ...
The Mg-delta-doped GaN structure was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The Hall-effect measurements revealed that the electrical properties were enhanced. A twof...
The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter curr...

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