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Barrier Heights of Antimony / and Bismuth / P -Silcon (100) Junctions
Barrier Heights Antimony Bismuth P -Silcon (100) Junctions
2010/4/15
Junctions were fabricated in vacuum of about 10-5 Torr by thermal evaporation of Sb or Bi onto chemically etched p-type silicon (100) substrates. The electrical properties were studied by current volt...