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A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature...
We use photoemission spectroscopy to study electronic structures of pristine and K-doped solid picene. The valence band spectrum of pristine picene consists of three main features with no state at t...
Pure and doped antimony selenide (Sb2Se3, Sb2Se2.8Te0.2, and Sb2Se2.6Te0.4) crystals have been grown from melt by the Bridgman Stockbarger method. X-ray powder diffraction analysis was carried out to ...
The calculation of the electronic energy levels of n-type d-doped quantum wells in a GaAs matrix is presented. The effects of hydrostatic pressure on the band structure are taken into account speciall...
In this work we report efficiency measurements on light-emitting diodes with electrochemically synthesized sulfonated polyaniline as hole transport layer. The anode used in our devices is fluorine-dop...
We performed the first-principles band-structure calculations for a pure and a Cd-doped AgInO2 delafossite compound. The results are carefully analyzed and compared with the results obtained for a pur...
Polyaniline (PANI) and their charge transfer complexes are engineering materials that continue to attract considerable attention from engineers due to their unique electrochemical behavior, environmen...
Boron-doped polycrystaline diamond films grown by hot-filament-assisted chemical vapor deposition were studied with ultraviolet photoemission spectroscopy (UPS), Raman spectroscopy, X-ray diffractomet...
This paper presents results of an EPR spectrum investigation of g-irradiated (Co60 dose 107 Rad) glasses Se, SeClx, Se0.95As0.05Clx and Se0.95As0.05Brx (x=0.001--0.1) at 77 K. An analysis of spectra r...
We investigated theoretically the change of electronic properties of Si d-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuni...

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