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近日，我所陈平平博士提出的“InN-基全太阳光谱光伏材料的分子束外延生长和物性研究”获得2004年上海市光科技计划资助。InN及InGaN(富In)半导体是当今半导体领域研究热点,由于该材料体系很难生长，一直来对于其基本的物理性质如缺少认识。最近的研究表明该InGaN材料体系能带从0.7到3.4eV连续可调，为全太阳光谱光伏材料体系，理论研究表明由该材料制备的太阳能电池效率高于50%（高于目前所有...
Electron Mobility Study of Hot-Wall CVD GaN and InN Nanowires
GaN InN Nanowires Electron transport
2010/9/25
A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gal...
Band Gap of Cubic AlN, GaN and InN Compounds Under Pressure
Lattice parameter bulk modulus pressure coefficient FP-LAPW, WIEN(2k)
2010/4/9
Numerical simulation based on FP-LAPW calculations is applied to study the lattice parameters, bulk modulus and band gap energy of zinc blende binaries AlN, GaN and InN under hydrostatic pressure. The...
We present, a systematic theoretical study of the adsorption of Ga, In and N over GaAs (110) surfaces based on parameter-free, self-consistent total energy and force calculations using the density fun...